PDF《CS90N03 A3》

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10 2019V01 R CS90N03 A3 Characteristics Curve: Figure3.Maximum Continuous Drain Current vs Case Temperature Figure4. Typical Output Characteristics Figure 2.Maximum Power Dissipation vs Case Temperature Figure 1.Maximum Safe Operating Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 Figure 9. Typical Drian to Source on Resistance vs Junction Temperature Figure 11. Typical Breakdown Voltage vs Junction Temperature Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 6.Typical Transfer Characteristics Figure 7.Typical Body Diode Transfer Characteristics Figure 10. Typical Theshold Voltage vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 Case Figure 12. Typical Capacitance vs Drain to Source Voltage Figure13. Typical Gate Charge vs Gate to Source Voltage WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching Waveforms WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform Figure20.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 Package Information: Items Values(mm) MIN MAX A 6.30 6.90 B 5.20 6.30 B1 0.70 1.30 B2 6.80 7.40 C 2.10 2.50 D 0.30 0.60 E 0.50 0.86 F 0.30 0.60 G 0.70 1.00 H 1.40 2.40 L* 9.00 9.80 M 5.10 5.50 N 2.09 2.49 *adjustable TO-251 Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit ≤0.1% ≤0.1% ≤ 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame Molding Chip Wire Bonding Solder * Note :Means the hazardous material is under the criterion of 2011/65/EU. *:Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup's RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under

80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 HTU http://www. crhj.com.cnUTH Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part: Post:214061 Tel: +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110