PDF《PSMN7R5-30MLD》

11 August

2015 3 /

13 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage

25 °C ≤ Tj ≤

175 °C -

30 V VDGR drain-gate voltage

25 °C ≤ Tj ≤

175 °C;

RGS =

20 kΩ -

30 V VGS gate-source voltage -20

20 V Ptot total power dissipation Tmb =

25 °C;

Fig.

1 -

45 W VGS =

10 V;

Tmb =

25 °C;

Fig.

2 -

57 A ID drain current VGS =

10 V;

Tmb =

100 °C;

Fig.

2 -

40 A IDM peak drain current pulsed;

tp ≤

10 ?s;

Tmb =

25 °C;

Fig.

3 -

230 A Tstg storage temperature -55

175 °C Tj junction temperature -55

175 °C Tsld(M) peak soldering temperature -

260 °C Source-drain diode IS source current Tmb =

25 °C -

38 A ISM peak source current pulsed;

tp ≤

10 ?s;

Tmb =

25 °C -

230 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS =

10 V;

Tj(init) =

25 °C;

ID =

15 A;

Vsup ≤

30 V;

RGS =

50 Ω;

unclamped;

tp =

97 ?s [1] - 28.3 mJ [1] Protected by 100% test NXP Semiconductors PSMN7R5-30MLD N-channel

30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN7R5-30MLD All information provided in this document is subject to legal disclaimers. ? NXP Semiconductors N.V. 2015. All rights reserved Product data sheet

11 August

2015 4 /

13 Tmb (°C)

0 200

150 50

100 03aa16

40 80

120 Pder (%)

0 Fig. 1. Normalized total power dissipation as a function of mounting base temperature aaa-008398

0 25

50 75

100 125

150 175

200 0

10 20

30 40

50 60 Tmb (°C) ID ID (A) (A) Fig. 2. Continuous drain current as a function of mounting base temperature aaa-008399 10-1

1 10

102 10-1

1 10

102 103 VDS (V) ID ID (A) (A) DC DC

100 ms

100 ms

10 ms

10 ms

1 ms

1 ms

100 us

100 us tp =

10 us tp =

10 us Limit RDSon = VDS / ID Limit RDSon = VDS / ID Fig. 3. Safe operating area;

continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig.

4 - 3.1 3.32 K/W NXP Semiconductors PSMN7R5-30MLD N-channel

30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN7R5-30MLD All information provided in this document is subject to legal disclaimers. ? NXP Semiconductors N.V. 2015. All rights reserved Product data sheet

11 August

2015 5 /

13 Symbol Parameter Conditions Min Typ Max Unit Fig.

5 -

57 - K/W Rth(j-a) thermal resistance from junction to ambient Fig.

6 -

178 - K/W 003aaj429 single shot 0.2 0.1 0.05 10-2 10-1

1 10 10-5 10-4 10-3 10-2 10-1

1 tp (s) Zth(j-mb) (K/W) δ = 0.5 0.02 10-6 tp T P t tp T δ = Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration aaa-008476 Fig. 5. PCB layout for thermal resistance junction to ambient

1 square pad;

FR4 Board;

2oz copper aaa-00........