PDF《DRV8313 三个半 H 桥驱动器集成电路 （IC）》

6 and 7). (6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections

6 and 7). (7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer

4 Copyright ? 2012, Texas Instruments Incorporated DRV8313 www.ti.com.cn ZHCSAD6A COCTOBER 2012CREVISED NOVEMBER

2012 RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VM Motor power-supply voltage range(1)

8 60 V VGNDX GND1, GND2, GND3 pin voltage C500

0 500 mV IV3P3 V3P3OUT load current

0 10 mA (1) All VM pins must be connected to the same supply voltage. ELECTRICAL CHARACTERISTICS TA = 25°C, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Power Supplies IVM VM operating supply current VM =

24 V, fPWM <

50 kHz

1 5 mA IVMQ VM sleep-mode supply current VM =

24 V

500 800 ?A VUVLO VM undervoltage lockout voltage VM rising 6.3

8 V V3P3OUT Regulator V3P3 V3P3OUT voltage IOUT =

0 to

10 mA 3.1 3.3 3.52 V Logic-Level Inputs VIL Input low voltage 0.6 0.7 V VIH Input high voltage 2.2 5.25 V VHYS Input hysteresis

50 600 mV IIL Input low current VIN =

0 C5

5 ?A IIH Input high current VIN = 3.3 V

100 ?A RPD Pulldown resistance

100 kΩ nFAULT and COMPO OutputS (Open-Drain Outputs) VOL Output low voltage IO =

5 mA 0.5 V IOH Output high leakage current VO = 3.3 V

1 ?A Comparator VCM Common-mode input-voltage range

0 5 V VIO Input offset voltage C7

7 mV IIB Input bias current C300

300 nA tR Response time 100-mV step with 10-mV overdrive

2 ?s H-Bridge FETs VM =

24 V, IO =

1 A, TJ = 25°C 0.24 rds(on) High-side FET on-resistance Ω VM =

24 V, IO =

1 A, TJ = 85°C 0.29 0.39 VM =

24 V, IO =

1 A, TJ = 25°C 0.24 rds(on) Low-side FET on-resistance Ω VM =

24 V, IO =

1 A, TJ = 85°C 0.29 0.39 IOFF Off-state leakage current C2

2 ?A tDEAD Output dead time

90 ns Protection Circuits IOCP Overcurrent protection trip level

3 A tOCP Overcurrent protection deglitch time

5 ?s TTSD Thermal shutdown temperature Die temperature

150 160

180 °C Copyright ? 2012, Texas Instruments Incorporated

5 DRV8313 ZHCSAD6A COCTOBER 2012CREVISED NOVEMBER

2012 www.ti.com.cn SWITCHING CHARACTERISTICS(1) TA = 25°, VM =

24 V, RL =

20 Ω NO. PARAMETER DESCRIPTION MIN MAX UNIT

1 t1 Delay time,........