PDF《封装：TO-3P》

1200 V DC collector IC

20 A Pulsed collector current ICpuls

50 A Gate-emitter voltage VGE ±30 V Power dissipation TC=25℃ PD

170 W Operating junction temperature TJ -55 to +150 ℃ Storage temperature TSTG -55 to +150 ℃ Package: : : :TO-3P

6 /8 Electrical Characteristic at Tc=25℃, unless otherwise specified Value PARAMETER SYMBOL Conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE=0 IC=1000uA

1200 V ICES Zero gate voltage collector current VGE=0 VCE=1200V

180 uA IGSS Gate-emitter leakage current VCE=0 VGE=20V

100 nA VGE(th) Gate-emitter threshold voltage VGE=VCE, ID=600uA 3.0 6.0 V VCE(sat) Collector-emitter saturation voltage VGE=15V, IC=20A 2.2 2.8 V Ciss Input capacitance

1350 1650 pF Coss output capacitance

100 120 pF Crss Reverse transfer capacitance VCE=25V, VGE=0, f=1MHz

65 80 pF Qg Gate charge Vcc=960V IC=20A VGE=15V

186 240 nC td(on) Turn-on delay time

38 50 ns tr Rise time

26 40 ns td(off) Turn-off delay time

240 350 ns tf Fall time

170 230 ns Eon Turn-on energy 2.2 2.6 mJ Eoff Turn-off energy VCC=800V, IC=20A, RG=33 ? Inductive load 0.92 1.2 mJ td(on) Turn-on delay time

40 55 ns tr Rise time

28 45 ns td(off) Turn-off delay time

242 365 ns tf Fall time

178 250 ns Eon Turn-on energy 2.4 2.7 mJ Eoff Turn-off energy VCC=800V, IC=20A, RG=33 ? TC=150℃ Inductive load 0.98 1.3 mJ VFM Diode forward voltage IF=20A 1.8 2.5 V trr Diode reverse recovery time

230 330 ns Irr Diode peak reverse recovery current

29 40 A Qrr Diode reverse recovery charge IF=20A dI/dt=200A/ us

2930 6750 nC

7 /8 Characteristic curves Collector current as a function of switching Safe operating area frequency Typical output characteristic Typical output characteristic (TC=25℃) (TC=150℃) Typical transfer characteristic Typical collector-emitter saturation voltage as a function of junction temperature

8 /8 Typical gate charge ypical capacitance as a function of (IC=15A) collector-emitter voltage (VGE=0V f=1MHZ) Package Dimension