PDF《CPV362M4K》

CPV362M4K PD-5.

045B Short Circuit Rated UltraFast IGBT IGBT SIP MODULE Features Features Features Features Features Description

3 6

7 13

19 18

15 10

16 4

9 12 D1 D3 D5 D2 D4 D6 Q1 Q2 Q3 Q4 Q5 Q6

1 Output Current in a Typical

20 kHz Motor Drive Product Summary ? Short Circuit Rated UltraFast: Optimized for high operating frequencies >

5.0 kHz , and Short Circuit Rated to 10?s @ 125°C, VGE = 15V ? Fully isolated printed circuit board mount package ? Switching-loss rating includes all tail losses ? HEXFRED TM soft ultrafast diodes ? Optimized for high operating frequency (over 5kHz) See Fig.

1 for Current vs. Frequency curve 4.3 ARMS per phase (1.27 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) The IGBT technology is the key to International Rectifier'

s advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. 2/24/98 IMS-2 Parameter Typ. Max. Units RθJC(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction CCC 5.5 RθJC(DIODE) Junction-to-Case, each diode, one diode in conduction CCC 9.0 °C/W RθCS(MODULE) Case-to-Sink, flat, greased surface 0.1 CCC Wt Weight of module

20 (0.7) CCC g (oz) Thermal Resistance Parameter Max. Units VCES Collector-to-Emitter Voltage

600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7 IC @ TC = 100°C Continuous Collector Current, each IGBT 3.0 ICM Pulsed Collector Current ?

11 A ILM Clamped Inductive Load Current ?

11 IF @ TC = 100°C Diode Continuous Forward Current 3.4 IFM Diode Maximum Forward Current

11 tsc Short Circuit Withstand Time

10 ?s VGE Gate-to-Emitter Voltage ±

20 V VISOL Isolation Voltage, any terminal to case,

1 minute

2500 VRMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT

23 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for

10 sec.

300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw 5-7 lbf?in (0.55 - 0.8 N?m) Absolute Maximum Ratings PRELIMINARY CPV362M4K Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage?

600 CCC CCC V VGE = 0V, IC = 250?A ?V(BR)CES/?TJ Temp. Coeff. of Breakdown Voltage CCC 0.49 CCC V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage CCC 1.70 1.93 IC = 3.0A VGE = 15V CCC 1.98 CCC V IC = 5.7A See Fig. 2,

5 CCC 1.65 CCC IC = 3.0A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 CCC 6.0 VCE = VGE, IC = 250?A ?VGE(th)/?TJ Temp. Coeff. of Threshold Voltage CCC -13 CCC mV/°C VCE = VGE, IC = 250?A gfe Forward Transconductance ? 2.0 3.0 CCC S VCE = 100V, IC = 12A ICES Zero Gate Voltage Collector Current CCC CCC

250 ?A VGE = 0V, VCE = 600V CCC CCC

1700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop CCC 1.4 1.7 V IC = 8A See Fig.

13 CCC 1.3 1.6 IC = 8A, TJ = 150°C IGES Gate-to-Emitter Leakage Current

100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) CCC

38 57 IC = 3.0A Qge Gate - Emitter Charge (turn-on) CCC 5.2