PDF《CPV362M4K》

8 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) CCC

18 27 See Fig.

8 td(on) Turn-On Delay Time CCC

23 CCC TJ = 25°C tr RiseTime CCC

54 CCC ns IC = 3.0A, VCC = 480V td(off) Turn-Off Delay Time CCC

125 188 VGE = 15V, RG = 51? tf FallTime CCC

120 180 Energy losses include tail and Eon Turn-On Switching Loss CCC 0.14 CCC diode reverse recovery. Eoff Turn-Off Switching Loss CCC 0.07 CCC mJ See Fig. 9, 10,

18 Ets Total Switching Loss CCC 0.21 0.26 tsc Short Circuit Withstand Time

10 s VCC = 360V, TJ = 125°C VGE = 15V, RG = 51?, VCPK <

500V td(on) Turn-On Delay Time CCC

25 CCC TJ = 150°C, See Fig. 10, 11,

18 tr RiseTime CCC

51 CCC ns IC =3.0A, VCC = 480V td(off) Turn-Off Delay Time CCC

308 CCC VGE = 15V, RG = 51? tf FallTime CCC

166 CCC Energy losses include tail and Ets Total Switching Loss CCC 0.33 CCC mJ diode reverse recovery. Cies Input Capacitance CCC

450 CCC VGE = 0V Coes Output Capacitance CCC

61 CCC pF VCC = 30V See Fig.

7 Cres Reverse Transfer Capacitance CCC

14 CCC ? = 1.0MHz trr Diode Reverse Recovery Time CCC

37 55 ns TJ = 25°C See Fig. CCC

55 90 TJ = 125°C

14 IF = 8A Irr Diode Peak Reverse Recovery Current CCC 3.5 5.0 A TJ = 25°C See Fig. CCC 4.5 8.0 TJ = 125°C

15 VR = 200V Qrr Diode Reverse Recovery Charge CCC

65 138 nC TJ = 25°C See Fig. CCC

124 360 TJ = 125°C

16 di/dt=200A/?s di(rec)M/dt Diode Peak Rate of Fall of Recovery CCC

240 CCC A/?s TJ = 25°C See Fig. During tb CCC

210 CCC TJ = 125°C

17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) CPV362M4K 0.1

1 10

100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 f, Frequency (KHz) LOAD CURRENT (A) Fig.

1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig.

2 - Typical Output Characteristics Fig.

3 - Typical Transfer Characteristics Total Output Power (kW) 1.46 1.17 0.88 0.59 0.29 0.00 1.76

1 10

100 1

10 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 20?s PULSE WIDTH GE T =

25 C J o T =

150 C J o

1 10

100 5

10 15

20 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5?s PULSE WIDTH CC T =

25 C J o T =

150 C J o Tc = 90°C Tj = 125°C Power Factor = 0.8 M odulation Depth = 1.15 Vcc = 50% of Rated Voltage 2.05 CPV362M4K Fig.

4 - Maximum Collector Current vs. Case Temperature Fig.

6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case Fig.

5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature

0 2

4 6

25 50

75 100

125 150 M a xim um D C C o lle ctor C u rre n t (A ) T , Case Tem perature (°C) C V = 15V GE A 0.01 0.1

1 10 0.00001 0.0001 0.001 0.01 0.1

1 10 t , Rectangular Pulse Duration (sec)

1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) T h e rm a l R e sp o n s e (Z ) P t

2 1 t D M Notes: 1. D uty factor D = t / t 2. Peak T = P x Z + T

1 2 J D M thJC C -60 -40 -20

0 20

40 60

80 100

120 140

160 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V

80 us PULSE WIDTH GE I = A

6 C I = A

3 C I = A 1.5 C CPV362M4K Fig.

7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig.

8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig.

9 - Typical Switching Losses vs. Gate Resistance Fig.

10 - Typical Switching Losses vs. Junction Temperature RG , Gate Resistance ( ? ) 10?

0 10

20 30

40 50 0.0 0.2 0.4 0.6 0.8 1.0 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 480V V = 15V T =