PDF《CPV362M4K》

25 C I = 6.0A CC GE J C °

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600 800 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc Cies Coes Cres

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12 16 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 3A CC C -60 -40 -20

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1 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = 51Ohm V = 15V V = 480V G GE CC I = A

6 C I = A

3 C I = A 1.5 C 51? CPV362M4K Fig.

11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig.

12 - Turn-Off SOA Fig.

13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0.1

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1000 C CE I , C o lle cto r-to -E m itte r C u rre n t (A ) SAFE O PERATING AREA V = 20V T = 125°C GE J V , Collector-to-Em itter Voltage (V) A 0.1

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100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 FM F In sta n ta n e o u s F o rw a rd C u rre n t - I (A ) Forward Voltage Drop - V (V) T = 150°C T = 125°C T = 25°C J J J

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7 0.0 0.2 0.4 0.6 0.8 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C R = 51Ohm T =

150 C V = 480V V = 15V G J CC GE ° ? CPV362M4K Fig.

14 - Typical Reverse Recovery vs. dif/dt Fig.

15 - Typical Recovery Current vs. dif/dt Fig.

16 - Typical Stored Charge vs. dif/dt Fig.

17 - Typical di(rec)M/dt vs. dif/dt

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100 1000 f di /dt - (A/?s) R R Q - (n C ) I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J

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1000 f di /dt - (A/?s) d i(re c )M /d t - (A /? s) I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J

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1000 f di /dt - (A/?s) I - (A ) IR R M I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J

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100 1000 f di /dt - (A/?s) t - (n s ) rr I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J CPV362M4K Same type device as D.U.T. D.U.T. 430?F 80% of Vce Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 Ic Vce t1 t2 90% Ic 10% Vce td(off) tf Ic 5% Ic t1+5?S Vce ic dt 90% Vge +Vge ∫ Eoff = Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf ∫Vce ie dt t2 t1 5% Vce Ic Ipk Vcc 10% Ic Vce t1 t2 DUT VO LTAGE AND CURRENT GATE VO LTAG E D.U.T. +Vg 10% +Vg 90% Ic tr td(on) DIO DE REVERSE RECOVERY ENERG Y tx Eon = ∫ Erec = t4 t3 Vd id dt t4 t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr ∫ Q rr = trr tx id dt Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt CPV362M4K Vg GATE SIG NAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 D.U.T. V * c 50V L 1000V 6000?F 100V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit RL= 480V

4 X IC @25°C

0 - 480V Figure 18e. Macro Waveforms for Figure 18a'

s Test Circuit CPV362M4K Case Outline ― IMS-2 Notes: ?Repetitive rating: VGE=20V;

pulse width limited by maximum junction temperature (figure 20) ?VCC=80%(VCES), VGE=20V, L=10?H, RG = 23? (Figure 19) ?Pulse width ≤ 80?s;

duty factor ≤ 0.1%. ?Pulse width 5.0?s, single shot. WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245, Tel: (310)

322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++