PDF《BLF7G20L-90P; BLF7G20LS-90P》

1.

Product profile 1.1 General description

90 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to

2000 MHz, designed for operation at

1427 MHz to1525 MHz,

1805 MHz to

1880 MHz and

2110 MHz to

2170 MHz. 1.2 Features and benefits ? Excellent ruggedness ? High efficiency ? Low Rth providing excellent thermal stability ? Designed for broadband operation (1427 MHz to1525 MHz,

1805 MHz to

1880 MHz and

2110 MHz to

2170 MHz) ? Lower output capacitance for improved performance in Doherty applications ? Designed for low memory effects providing excellent pre-distortability ? Internally matched for ease of use ? Integrated ESD protection ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? RF power amplifiers for base stations and multi carrier applications in the frequency bands of

1427 MHz to

1525 MHz,

1805 MHz to

1880 MHz and

2110 MHz to

2170 MHz. BLF7G20L-90P;

BLF7G20LS-90P Power LDMOS transistor Rev.

3 ―

1 September

2015 Product data sheet Table 1. Typical performance Typical RF performance at Tcase =

25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR400k ACPR600k EVMrms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW

1805 to

1880 550

28 84

19 54 - - - GSM EDGE

1805 to

1880 550

28 40 19.5

41 ?61 ?74 2.5 BLF7G20L-90P_7G20LS-90P#3 All information provided in this document is subject to legal disclaimers. ? Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev.

3 ―

1 September

2015 2 of

15 BLF7G20L-90P;

BLF7G20LS-90P Power LDMOS transistor 2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G20L-90P (SOT1121A)

1 drain1

2 drain2

3 gate1

4 gate2

5 source [1] BLF7G20LS-90P (SOT1121B)

1 drain1

2 drain2

3 gate1

4 gate2

5 source [1]

2 4

5 3

1 4

3 5

1 2 sym117

4 3

5 1

2 sym117 Table 3. Ordering information Type number Package Name Description Version BLF7G20L-90P - flanged LDMOST ceramic package;

2 mounting holes;

4 leads SOT1121A BLF7G20LS-90P - earless flanged LDMOST ceramic package;

4 leads SOT1121B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -

65 V VGS gate-source voltage ?0.5 +13 V ID drain current -

18 A Tstg storage temperature ?65 +150 ?C Tj junction temperature -

200 ?C BLF7G20L-90P_7G20LS-90P#3 All information provided in this document is subject to legal disclaimers. ? Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev.

3 ―

1 September

2015 3 of

15 BLF7G20L-90P;

BLF7G20LS-90P Power LDMOS transistor 5. Thermal characteristics 6. Characteristics 7. Test information Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase =

80 ?C;

PL =

90 W 0.49 K/W Table 6. Characteristics Tj =

25 ?C;

per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =

0 V;

ID = 0.5 mA

65 - - V VGS(th) gate-source threshold voltage VDS =

10 V;

ID =

50 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS =

0 V;

VDS =

28 V - -

2 ?A IDSX drain cut-off current VGS = VGS(th) + 3.75 V;