PDF《BLF7G20L-90P; BLF7G20LS-90P》

VDS =

10 V 8.2 9.5 - A IGSS gate leakage current VGS =

11 V;

VDS =

0 V - -

200 nA gfs forward transconductance VDS =

10 V;

ID = 2.5 A - 3.8 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;

ID = 1.75 A - 0.28 - ? Table 7. Application information f =

1805 MHz to

1880 MHz;

RF performance at VDS =

28 V;

IDq =

550 mA;

Tcase =

25 ?C;

2 sections combined unless otherwise specified;

in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Mode of operation: GSM EDGE;

PL(AV) =

40 W Gp power gain 18.3 19.5 - dB RLin input return loss - ?15 ?8 dB ?D drain efficiency

38 41 - % ACPR400k adjacent channel power ratio (400 kHz) - ?61 ?58 dBc ACPR600k adjacent channel power ratio (600 kHz) - ?74 ?70.5 dBc EVMrms RMS EDGE signal distortion error - 2.5 3.8 % EVMM peak EDGE signal distortion error -

8 12.5 % Mode of operation: CW;

PL(AV) =

84 W Gp power gain 17.8

19 - dB ?D drain efficiency

51 54 - % BLF7G20L-90P_7G20LS-90P#3 All information provided in this document is subject to legal disclaimers. ? Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev.

3 ―

1 September

2015 4 of

15 BLF7G20L-90P;

BLF7G20LS-90P Power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch corresponding to VSWR =

10 :

1 through all phases under the following conditions: VDS =

28 V;

IDq =

550 mA;

PL =

90 W (CW), f =

1805 MHz, VDS =

28 V;

IDq =

380 mA;

PL =

40 W (CW, half device), f =

2110 MHz, VDS =

28 V;

IDq =

380 mA;

PL =

55 W (CW pulse,

10 %,

100 ?s, halve device), f =

1427 MHz. 7.2 One-tone CW VDS =

28 V;

IDq =

550 mA;

f =

1880 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power;

typical values PL (W)

0 100

80 40

60 20 001aal867

22 Gp (dB) Gp ηD

20 18

16 15

17 19

21 70

50 30

10 0

20 40

60 ηD (%) BLF7G20L-90P_7G20LS-90P#3 All information provided in this document is subject to legal disclaimers. ? Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev.

3 ―

1 September

2015 5 of

15 BLF7G20L-90P;

BLF7G20LS-90P Power LDMOS transistor 7.3 Two-tone CW 7.4 GSM EDGE VDS =

28 V;

IDq =

550 mA;

f1 = 1879.95 MHz;

f2 = 1880.05 MHz. VDS =

28 V;

IDq =

550 mA;

f1 = 1879.95 MHz;

f2 = 1880.05 MHz. Fig 2. Two-tone CW power gain and drain efficiency as function of load power;

typical values Fig 3. Two-tone CW intermodulation distortion as a function of load power;

typical values PL (W)

70 50

10 60

40 20

0 30 001aal868 Gp (dB)

15 ηD (%)

16 17

18 19

20 21

22 0

10 20

30 40

50 60

70 Gp ηD PL (W)

70 50

10 60

40 20

0 30 001aal869 ?40 ?60 ?20

0 IMD (dBc) ?80 IMD3 IMD5 IMD7 VDS =

28 V;

IDq =

550 mA;

f =

1880 MHz. VDS =

28 V;

IDq =

550 mA;

f =

1880 MHz. Fig 4. GSM EDGE power gain and drain efficiency as function of load power;

typical values Fig 5. GSM EDGE ACPR at

400 kHz and at

600 kHz as function of load power;

typical values PL (W)

70 50

10 60

40 20

0 30 001aal870 Gp (dB)

14 ηD (%)

15 16

17 18

19 20

21 0

10 20

30 40

50 60

70 Gp ηD PL (W)

0 20

40 60

70 50

30 10 001aal871 ?70 ?60 ?50 ACPR (dBc) ?80 ACPR400k ACPR600k BLF7G20L-90P_7G20LS-90P#3 All information provided in this document is subject to legal disclaimers. ? Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev.